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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
IRFB3307ZPBF IRFS3307ZPbF IRFSL3307ZPbF
D
PD - 97214B
HEXFET(R) Power MOSFET
Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability
S
VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)
D
75V 4.6m: 5.8m: 120Ac 75A
D
D
G
D
S G
S
G
D
S
TO-220AB IRFB3307ZPBF
D2Pak IRFS3307ZPbF
TO-262 IRFSL3307ZPbF
G
D
S
Gate
Drain
Max.
120c 88c 75 480 230 1.5 20 6.7 -55 to + 175 300 10lbxin (1.1Nxm) 140 75 23
Source
Units
A
Absolute Maximum Ratings
Symbol
ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Single Pulse Avalanche Energy e Avalanche Current c Repetitive Avalanche Energy g
W W/C V V/ns C
Avalanche Characteristics
EAS (Thermally limited) IAR EAR mJ A mJ
Thermal Resistance
Symbol
RJC RCS RJA RJA
Parameter
Junction-to-Case k Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 k Junction-to-Ambient (PCB Mount) , D Pak jk
2
Typ.
--- 0.50 --- ---
Max.
0.65 --- 62 40
Units
C/W
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1
05/31/07
IRFB/S/SL3307ZPbF
Static @ TJ = 25C (unless otherwise specified)
Symbol
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) RG(int) IDSS IGSS
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Internal Gate Resistance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
75 --- --- 2.0
---
Conditions
--- 0.094 4.6 --- 0.70 --- --- --- ---
--- --- 5.8 4.0 --- 20 250 100 -100
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 5mAd m VGS = 10V, ID = 75A g V VDS = VGS, ID = 150A
--- --- --- ---
A nA
VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR)
Parameter
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
--- 79 19 24 55 15 64 38 65 4750 420 190 440 410 --- 110 --- --- --- --- --- --- --- --- --- --- --- --- S nC
Conditions
VDS = 50V, ID = 75A ID = 75A VDS = 38V VGS = 10V g ID = 75A, VDS =0V, VGS = 10V VDD = 49V ID = 75A RG = 2.6 VGS = 10V g VGS = 0V VDS = 50V = 1.0MHz VGS = 0V, VDS = 0V to 60V j VGS = 0V, VDS = 0V to 60V h
320 --- --- --- --- --- --- --- --- --- --- --- Effective Output Capacitance (Energy Related)i --- --- Effective Output Capacitance (Time Related)h
ns
pF
Diode Characteristics
Symbol
IS ISM VSD trr Qrr IRRM ton
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) di Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- 120c --- 480 A
Conditions
MOSFET symbol showing the integral reverse
G S D
--- --- 1.3 V --- 33 50 ns --- 39 59 --- 42 63 nC TJ = 125C --- 56 84 --- 2.2 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V g TJ = 25C VR = 64V, TJ = 125C IF = 75A di/dt = 100A/s g TJ = 25C
Notes: Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.050mH RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. ISD 75A, di/dt 1570A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as When mounted on 1" square PCB (FR-4 or G-10 Material). For recom R is measured at TJ approximately 90C.
Coss while VDS is rising from 0 to 80% VDSS. mended footprint and soldering techniques refer to application note #AN-994.
2
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IRFB/S/SL3307ZPbF
1000
TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V
1000
TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
4.5V 10
10
60s PULSE WIDTH
Tj = 25C 1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 1 0.1 1
60s PULSE WIDTH
Tj = 175C 10
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
Fig 2. Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
ID = 72A VGS = 10V 2.0
100 T J = 175C 10 T J = 25C
1.5
1 VDS = 25V 60s PULSE WIDTH 0.1 2 3 4 5 6 7 8
1.0
0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd
Fig 4. Normalized On-Resistance vs. Temperature
12.0 ID= 72A
VGS, Gate-to-Source Voltage (V)
10.0 8.0 6.0 4.0 2.0 0.0
C, Capacitance (pF)
VDS= 60V VDS= 38V VDS= 15V
10000 Ciss
1000
Coss Crss
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0
10
20
30
40
50
60
70
80
90
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRFB/S/SL3307ZPbF
1000 10000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 175C
1000
100
100sec
10
T J = 25C
1msec
10
10msec
1 VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V)
DC
1
Tc = 25C Tj = 175C Single Pulse 1 10 VDS, Drain-to-Source Voltage (V) 100
0.1
Fig 7. Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
120 Limited By Package 100
ID, Drain Current (A)
Fig 8. Maximum Safe Operating Area
100 Id = 5mA 95 90 85 80 75 70 65 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( C )
80 60 40 20 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
Fig 9. Maximum Drain Current vs. Case Temperature
1.2
Fig 10. Drain-to-Source Breakdown Voltage
600
EAS , Single Pulse Avalanche Energy (mJ)
1.0 0.8
Energy (J)
500 400 300 200 100 0
ID 15A 26A BOTTOM 75A TOP
0.6 0.4 0.2 0.0 20 30 40 50 60 70 80
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (C)
4
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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IRFB/S/SL3307ZPbF
1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01
J J 1 R1 R1 2 R2 R2 R3 R3 3 C 3
Thermal Response ( Z thJC )
Ri (C/W) i (sec) 0.1164 0.000088 0.3009 0.2313 0.001312 0.009191
0.01
1
2
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100 0.01
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse)
Avalanche Current (A)
0.05 10 0.10
1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 0.1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01
Fig 14. Typical Avalanche Current vs.Pulsewidth
150 125 100 75 50 25 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 75A
Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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EAR , Avalanche Energy (mJ)
5
IRFB/S/SL3307ZPbF
4.5
VGS(th) , Gate threshold Voltage (V)
20 IF = 48A V R = 64V 15 TJ = 25C TJ = 125C
4.0 3.5 3.0
IRR (A)
2.5 2.0 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) ID = 150A ID = 250A ID = 1.0A ID = 1.0mA
10
5
0 0 200 400 600 800 1000 diF /dt (A/s)
Fig 16. Threshold Voltage vs. Temperature
20 IF = 72A V R = 64V 15 TJ = 25C TJ = 125C
QRR (A)
Fig. 17 - Typical Recovery Current vs. dif/dt
420 IF = 48A V R = 64V TJ = 25C TJ = 125C
340
IRR (A)
260
10
180
5
100
0 0 200 400 600 800 1000 diF /dt (A/s)
20 0 200 400 600 800 1000 diF /dt (A/s)
Fig. 18 - Typical Recovery Current vs. dif/dt
420 IF = 72A V R = 64V TJ = 25C TJ = 125C
Fig. 19 - Typical Stored Charge vs. dif/dt
340
QRR (A)
260
180
100
20 0 200 400 600 800 1000 diF /dt (A/s)
6
Fig. 20 - Typical Stored Charge vs. dif/dt
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IRFB/S/SL3307ZPbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 21a. Unclamped Inductive Test Circuit
LD VDS
Fig 21b. Unclamped Inductive Waveforms
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
90%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 22a. Switching Time Test Circuit
Fig 22b. Switching Time Waveforms
Id Vds Vgs
L
0
DUT 1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
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Fig 23a. Gate Charge Test Circuit
Fig 23b. Gate Charge Waveform
7
IRFB/S/SL3307ZPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
@Y6HQG@) UCDTADTA6IADSA A GPUA8P9@A &'( 6TT@H7G@9APIAXXA (A ((& DIAUC@A6TT@H7GAGDI@AA8A
Note: "P" in assembly line position indicates "Lead-Free"
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@
Q6SUAIVH7@S 96U@A8P9@ @6SA&A2A ((& X@@FA ( GDI@A8
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
8
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IRFB/S/SL3307ZPbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
UCDTADTA6IADSA$"TAXDUC GPUA8P9@A'!# 6TT@H7G@9APIAXXA!A! DIAUC@A6TT@H7GAGDI@AAGA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S A$"T 96U@A8P9@ @6SAA2A! X@@FA! GDI@AG
25
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S A$"T 96U@A8P9@ QA2A9@TDBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G @6SAA2A! X@@FA! 6A2A6TT@H7GATDU@A8P9@
9
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
IRFB/S/SL3307ZPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
@Y6HQG@) UCDTADTA6IADSG" "G GPUA8P9@A &'( 6TT@H7G@9APIAXXA (A ((& DIAUC@A6TT@H7GAGDI@AA8A DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
96U@A8P9@ @6SA&A2A ((& X@@FA ( GDI@A8
25
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
96U@A8P9@ QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G @6SA&A2A ((& X@@FA ( 6A2A6TT@H7GATDU@A8P9@
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
10
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IRFB/S/SL3307ZPbF
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/07
11

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